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ELMOS Semiconductor AG

Data Sheet

QM-No.: 25DS0091E.00

PRELIMINARY INFORMATION - JUL 28, 2011

This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.

INTEGRATED CIRCUIT FOR PIR SMART SENSOR

E910.97

Electrical Characteristics_______________________________________

Absolute Maximum Ratings

Parameter

Symbol Min

Max

Unit Remarks

Supply Voltage

-0.3

3.6

V

Current into any pin

-100

100

mA

One pin at a time

Storage Temperature

-45

125

°

C

Table 3: Electrical Characteristics

Stresses beyond those listed above may cause permanent damage to the device. Exposure to absolute maximum ratings may affect

the device reliability. ESD protection: all pins will be able to withstand a discharge of a 100pF capacitor charged to 1.6kV through a

1500Ω series resistor. Test method: MIL-STD-883D method 3015.

Parameter

Symbol

Min

Typ

Max

Unit

Remarks

Temperature

Operating temperature range

-25

85

°

C

Regulator

Shunt regulator current

5

mA

Supply current, ENREG=VDD

40

µA

VDD < Regulator voltage,

Outputs unloaded

Supply current, ENREG=VSS

15

µA

Regulator not active,

VDD=3.3V (Bond option)

Regulator voltage

2.7

3.3

V

Input OEN

Input low voltage

20

Input high voltage

80

Digital test-mode

V

Analog test-mode

V

Input Current

-1

1

µA

Input Current – Analog test mode

20

µA

Input Current – Digital test mode

-20

µA

Output REL

Output current high

-10

mA

Output current low

10

mA

Inputs SENS, ONTIME

Input voltage range

0

Adjustment between 0V

and ¼ VDD

Input leakage current

-1

1

µA

PIRIN / NPIRIN Inputs

20

GΩ

-60mV < VIN < 60mV

PIRIN /NPIRIN input resistance differential

40

GΩ

-60mV < VIN < 60mV

PIRIN input voltage range

-60

60

mV

Oscillator and Filter

LPF cutoff frequency

7

Hz

HPF cutoff frequency

0.44

Hz

On chip oscillator frequency

64

kHz

System Clock

C_G

Table 4: Operating Conditions