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ELMOS Semiconductor AG

Data Sheet

QM-No.: 25DS0091E.00

PRELIMINARY INFORMATION - JUL 28, 2011

This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.

INTEGRATED CIRCUIT FOR PIR SMART SENSOR

E910.97

ON Time

1E+0

10E+0

100E+0

1E+3

10E+3

0.00

0.05

0.10

0.15

0.20

0.25

0.30

ONTIME Voltage (Normalized VDD)

Sensitivity Threshold

000E+0

100E-6

200E-6

300E-6

400E-6

500E-6

600E-6

0.00

0.05

0.10

0.15

0.20

0.25

0.30

SENS Voltage (Normalized VDD)

On Time

A voltage applied to the ONTIME input set the time the

REL output is active with a single trigger event. Any

voltage above VDD/4 will select the maximum on time.

Pin voltage

PIN ADC

count

ON Time in

seconds

ON Time

0

2

2 sec

1

4

4 sec

2

6

6 sec

3

8

8 sec

4

16

16 sec

5

33

32 sec

6

49

49 sec

7

66

1 min 5 sec

8

131

2 min 11 sec

9

262

4 min 22 sec

10

393

6 min 33 sec

11

524

8 min 44 sec

12

1049

17 min 28 sec

13

2097

34 min 57 sec

14

3146

52 min 25 sec

15

4194

1 hour 10 min

Table 5: DC input voltages and parameter values

Sensitivity

A voltage applied to the SENS input sets the threshold

used to detect a PIR signal between the PIRIN and

NPIRIN inputs. VSS selects the minimum threshold

voltage. Any voltage above VDD/4 will select the

maximum threshold, which is the least sensitive setting

for PIR signal detection.

Graph 1: PIR voltage trigger threshold vs. SENS pin voltages

normalized to VDD.

Graph 2: REL Output On Time in seconds vs.

ONTIME pin voltages normalized to VDD.