E981.10

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ELMOS Semiconductor AG

Data Sheet

QM-No.: 25DS0007E.02 2010-06-16

3 Operating conditions

3.1 absolute Maximum ratings

Continuous operation of the device above these ratings is not recommended and may destroy the device. All po-

tentials referred to GROUND (GND) unless otherwise specified. Currents flowing into the circuit pins have posi-

tive values.

no.

Description

condition

symbol

Min.

Max.

Unit

1

Continous DC voltage at VDDH

VDDH

-0.3

40

V

2

Continous DC voltage at VDD_IO

VDD_IO

-0.3

5.5

V

3

Continous DC voltage at C/Q pin

C/Q-GND

VCQ

-40

40

V

4

Voltage at C/Q

t<500ms

C/Q-GND

-40

60

V

5

Continous DC voltage at C/Q pin

VDDH-C/Q

VCQ

40

V

6

Voltage at C/Q

t<500ms

VDDH-C/Q

60

V

7

Continous DC voltage at digital I/Os

VIO_DIG

-0.3

VDD_IO+0.3

V

8

AEC Q100-002 (HBM)

ESD

immunity

2

kV

9

Storage temperature

Tstg

-40

125

°C

10

Junction temperature

Tj

150

°C

11

Ambient temperature

Ta

125

°C

12

Power dissipation

PV

900

mW

no.

Description

condition

symbol

Min.

typ.

Max.

Unit

1

Supply voltage at pin VDDH

VDDH

8

24

36

V

2

Digital interface supply

3.3V interface

supply

VDD_IO

3

3.3

3.6

V

3

Digital interface supply

5V interface

supply

VDD_IO

4.5

5

5.5

V

4

Operating temperature

range

Top

-40

100

°C

5

Supply voltage at pin VDDH

for IO-Link communication

VDDH

18

24

30

V

3.2 recommended Operating conditions

The following conditions apply unless otherwise stated. All potentials referred to GROUND (GND) unless other-

wise specified.Currents flowing into the circuit pins have positive values.