THS4502

THS4503

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SLOS352E

– APRIL 2002 – REVISED OCTOBER 2011

ABSOLUTE MAXIMUM RATINGS

UNIT

16.5 V

150 mA

4 V

Continuous power dissipation

See Dissipation Rating Table

(3)

150

°C

(4)

125

°C

(5)

60

°C

C suffix

0

°C to 70°C

I suffix

-40

°C to 85°C

-65

°C to 150°C

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

(2)

The THS450x may incorporate a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected to a thermally

dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could

permanently damage the device. See TI technical brief SLMA002 for more information about utilizing the PowerPAD thermally enhanced

package.

(3)

The absolute maximum temperature under any condition is limited by the constraints of the silicon process.

(4)

The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may

result in reduced reliability and/or lifetime of the device.

(5)

See Maximum Die Temperature to Prevent Oscillation section in the Application Information of this data sheet.

PACKAGE DISSIPATION RATINGS

(1)

PACKAGE

(

°C/W)

(

°C/W)

D (8 pin)

38.3

97.5

DGN (8 pin)

4.7

58.4

DGK (8 pin)

54.2

260

(1)

This data was taken using the JEDEC standard High-K test PCB.

RECOMMENDED OPERATING CONDITIONS

MIN

NOM

MAX

UNIT

Dual supply

±5

±7.5

Supply voltage

V

Single supply

4.5

5

15

C suffix

0

70

°C

I suffix

-40

85

Copyright

© 2002–2011, Texas Instruments Incorporated

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