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DS1677 Datasheet(PDF) 13 Page - Dallas Semiconductor |
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DS1677 Datasheet(HTML) 13 Page - Dallas Semiconductor |
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13 / 17 page ![]() DS1677 13 of 17 CAPACITANCE (tA=25 °C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Input Capacitance CI 10 pF I/O Capacitance CI/O 15 pF Crystal Capacitance CX 6pF AC ELECTRICAL CHARACTERISTICS (0 °C to 70°C; V CC=5.0V ±10%) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Data to Clock Setup tDC 50 ns 8 CLK to Data Hold tCDH 70 ns 8 CLK to Data Delay tCDD 200 ns 8, 9, 10 CLK to Low Time tCL 250 ns 8 CLK to High Time tCH 250 ns 8 CLK Frequency tCLK 2.0 MHz 8 CLK Rise and Fall tR, tF 500 ns CS to CLK Setup tCC 1 µs 8 CLK to CS Hold tCCH 60 ns 8 CS Inactive Time tCWH 1 µs 8 CS to I/O High-Z tCDZ 70 ns 8 VCC Slew Rate (4.5V to 2.3V) tF 1ms VCC Slew Rate (2.3V to 4.5V) tR 0ns VCC Detect to RST (VCC Falling) tRPD 100 ns Reset Active Time tRST 250 ms 15 Pushbutton Debounce PBDB 250 ms 15 VCC Detect to RST (VCC Rising) tRPU 250 ms 15, 16 ST Pulse Width tST 20 ns Chip Enable Propagation Delay to External SRAM tCED 815 ns Nominal Voltage to VCC Switchover Fall Time tFB 200 µs PFI Low to PFO Low tPFD 2 µs PFI High to PFO High tPFU 2 µs |
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