STL35N15F3 datasheet(4/17 Pages) STMICROELECTRONICS

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Electrical characteristics

STL35N15F3

4/17

Doc ID 018598 Rev 2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

150

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 150 V

VDS = 150 V, TC = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS= 10 V, ID= 3.5 A

0.0355

0.04

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz,

VGS=0

1905

171

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 6 A

VGS =10 V

Figure 14

49.4

7.3

22.6

Gate input resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20 mV

open drain

-1.7

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD=75 V, ID= 3.5 A,

RG= 4.7 Ω, VGS=10 V

Figure 13

Obsolete

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- Obsolete

Product(s)

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