2SC5009 datasheet(1/10 Pages) NEC

Part #	2SC5009

Description	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

PDF	10 Pages

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Manufacturer	NEC [NEC]

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©

1993

DATA SHEET

SILICON TRANSISTOR

Document No. P10388EJ2V0DS00 (2nd edition)

(Previous No. TD-2430)

Date Published July 1995 P

Printed in Japan

2SC5009

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION

The 2SC5009 is an NPN epitaxial silicon transistor designed for use

in low noise and small signal amplifiers from VHF band to L band. Low

noise figure, high gain, and high current capability achieve a very wide

dynamic range and excellent linearity. This is achieved by direct nitride

passivated base surface process (NEST3 process) which is an NEC

proprietary new fabrication technique.

FEATURES

•

Low Voltage Use.

•

High fT

: 12.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)

•

Low Cre

: 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)

•

Low NF

: 2.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz)

•

High |S21e|2 : 8.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)

•

Ultra Super Mini Mold Package.

ORDERING INFORMATION

PART

QUANTITY

PACKING STYLE

NUMBER

2SC5009

50 pcs./Unit

2SC5009-T1

3 kpcs./Reel

* Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

VCBO

9V

Collector to Emitter Voltage

VCEO

6V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

10

mA

Total Power Dissipation

PT

60

mW

Junction Temperature

Tj

150

˚C

Storage Temperature

Tstg

–65 to +150

˚C

Embossed tape 8 mm wide.

Pin 3 (Collector) face to perforation side

of the tape.

PACKAGE DIMENSIONS

in milimeters

1.6±0.1

0.8±0.1

2

1

3

1. Emitter

2. Base

3. Collector

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