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MA7001 Datasheet(PDF) 2 Page - Dynex Semiconductor

Part # MA7001
Description  Radiation Hard 512x9 Bit FIFO
PDF  15 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

MA7001 Datasheet(HTML) 2 Page - Dynex Semiconductor

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MA7001
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DC CHARACTERISTICS AND RATINGS
Symbol
Parameter
Min.
Max.
Units
VDD
Supply Voltage
-0.5
7.0
V
VIN
Input Voltage
-0.3
VDD+0.3
V
TA
Operating Temperature
-55
125
°C
TS
Storage Temperature
-65
150
°C
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or at
any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Figure 2: Absolute Maximum Ratings
The following D.C. and A.C. electrical characteristics apply to pre-radiation at TA = -55°C to +125°C, VDD = 5V ±10% and post
100kRad(Si) total dose radiation at TA = 25°C, VDD = 5V ±10%. GROUP A SUBGROUP 1, 2, 3.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VIH
Input logic '1' voltage
-
2.0
-
-
V
VIL
Input logic '0' voltage
-
-
-
0.8
V
IIL
Input leakage current (any input) (Note 4)
Note 1
-10
-
10
µA
IOL
Output leakage current (Note 4)
Note 2
-50
-
50
µA
VOH
Output logic '1' voltage
lOUT = -1mA
2.4
-
-
V
VOL
Output loglc '0' voltage
lOUT = 2mA
-
-
0.4
V
IDD1
Average VDD power supply current (Note 3)
Freq = 10MHz
-
70
100
mA
IDD2
Average standby current (Note 3)
R = W = RS = FL/RT = VDD/2
-
8
15
mA
IDD3(L)
Powerdown current (Note 3)
All Inputs = VDD -0.2V
-
-
3.0
mA
NOTES:
1. Measurements with VSS ≤ VIN ≤ VDD
2.
R > VIH, VSS ≤ VOUT ≤ VDD
3. IDD measurements are made wlth outputs open, VDD = 5.5V
4. Guaranteed but not measured at -55
°C
Figure 3a: DC Electrical Characteristics



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