MA9264

1/15

The MA9264 64k Static RAM is configured as 8192x8 bits and

manufactured using CMOS-SOS high performance, radiation hard,

1.5

µm technology.

The design uses a 6 transistor cell and has full static operation with

no clock or timing strobe required. Address input buffers are deselected

when chip select is in the HIGH state.

See Application Note “Overview of the Dynex Semiconductor

Radiation Hard 1.5

µm CMOS/SOS SRAM Range”.

FEATURES

s 1.5

µm CMOS-SOS Technology

s Latch-up Free

s Fast Access Time 70ns Typical

s Single 5V Supply

s Three State Output

s Low Standby Current 100

µA Typical

s -55

°C to +125°C Operation

s All Inputs and Outputs Fully TTL or CMOS

Compatible

s Fully Static Operation

Operation Mode

CS

CE

OE

WE

I/O

Power

Read

L

H

L

H

D OUT

Write

L

H

X

L

D IN

ISB1

Output Disable

L

H

H

H

High Z

Standby

H

X

X

X

High Z

ISB2

XL

X

X

X

Figure 1: Truth Table

Figure 2: Block Diagram

A12

A9

A8

A4

A3

A6

A5

A7

A

D

D

R

E

S

S

B

U

F

F

E

R

R

O

W

D

E

C

O

D

E

R

A10

A0

A1

A2

A11

CS

CE

WE

OE

MA9264

Radiation Hard 8192x8 Bit Static RAM

Replaces June 1999 version, DS3692-6.0

DS3692-7.0 January 2000