STP77N6F6 datasheet(1/13 Pages) STMICROELECTRONICS

Part #	STP77N6F6

Description	N-channel 60 V, 0.0063 typ., 77 A STripFET VI DeepGATE Power MOSFET in a TO-220 package

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 13 page

This is information on a product in full production.

May 2013

DocID024067 Rev 2

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13

STP77N6F6

N-channel 60 V, 0.0063

Ω typ., 77 A STripFET™ VI DeepGATE™

Power MOSFET in a TO-220 package

Datasheet

− production data

Figure 1. Internal schematic diagram

Features

• RDS(on) * Qg industry benchmark

• Extremely low on-resistance RDS(on)

• High avalanche ruggedness

• Low gate drive power losses

• Very low switching gate charge

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using the 6th generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest RDS(on) in all packages.

TO-220

1

2

3

TAB

Order code

VDS

RDS(on) max

ID

PTOT

STP77N6F6

60 V

0.007

Ω

77 A

80 W

Table 1. Device summary

Order code

Marking

Package

Packaging

STP77N6F6

77N6F6

TO-220

Tube

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