STP77N6F6 datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Electrical characteristics

STP77N6F6

4/13

DocID024067 Rev 2

Electrical characteristics

(TJ= 25 °C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS = 0

IDSS

Zero gate voltage

Drain current

VDS = 60 V, VGS = 0

µA

VDS = 60 V, VGS= 0,

TJ=125 °C

100

µA

IGSS

Gate-body leakage

current

VGS = ± 20 V, VDS = 0

± 100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 38.5 A

0.0063

0.007

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

4295

Coss

Output capacitance

292

Crss

Reverse transfer

capacitance

-190

Total gate charge

VDD = 30 V, ID = 77 A,

VGS = 10 V

70.5

Qgs

Gate-source charge

19.7

Qgd

Gate-drain charge

16.2

Intrinsic gate resistance

f = 1 MHz open drain

2.2

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 77 A

RG =4.7 Ω VGS = 10 V

-22

Rise time

td(off)

Turn-off-delay time

Fall time

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