SEMICONDUCTOR

Nell High Power Products

RoHS

RoHS

Collector Current, l (A)

C

Fig.5 Turn-off time

Fig.3 Active region safe operating area

Fig.4 Turn-on time

2.0

20

40

0

60

0.5

0.2

10

60

0.05

3.0

0.5

0.3

0.2

6.0

4.0

0.06

0.2

0.7

0.4

0.2

0.1

0.06

Collector current , I (A)

C

Page 3 of 5

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1.0

0

20

40

60

80

100

120

80

140

160

4.0

2.0

1.0

0.6

0.5

1.0

2.0

5.0

10

20

40

0.3

0.1

2.0

1.0

3.0

0.1

0.2

0.4 0.6

5.0

1.0

0.1

1.0

2.0

Temperature, T (°C)

TIP41 (NPN) Series

TIP42 (PNP) Series

3.0

4.0

0

T = 25

°C

J

V

= 30V

CC

I /I = 10

C

B

t @ V

≈ 5.0V

d

BE(off)

6.0

0.05

0.1

0.07

0.02

0.03

Second Breakdown Limited

Thermal limit @ T = 25

˚C

J

Bonding wire limit

CURVES APPLY

TIP41A,TIP42A

TIP41B,TIP42B

TIP41C,TIP42C

1.0ms

5.0ms

0.5ms

T = 150

°C

J

TIP41.TIP42

(Single pulse)

80100

5.0

There are two limitations on the power handling ability of a transistor:

average junction temperature and second breakdown. Safe operating

area curves indicate l -V

limits of the transistor that must be observed

C

CE

for reliable operation; i.e., the

must not be subjected to

dissipation than the curve indicate.

transistor

The data of fig.3 is based on T

= 150°C; T is variable depending on

conditions. Second breakdown pulse limits are valid for duty cycles to10%

provided T

°C. T

may be

greater

J(pk)

C

≤ 150

calulated form the data in Figure 13.

J(pk)

J(pk)

At high case temperatures, thermal limitations will reduce the power that

can be handled to values less than the limitations imposed by second

breakdown.

Collector-emitter voltage , V

(V)

CE

I

= I

B1

B2

I / I = 10

C

B

V

= 30V

CC

T = 25°C

J

0.07

0.7

2.0

0.3

+11 V

25 µs

0

-9.0 V

-4 V

SCOPE

+30 V

Rc

DUTY CYCLE = 1.0%

Fig.1 Power Derating

Fig.2 Switching time test circuit

CURRENT LEVELS

r