SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

Page 2 of 5

www.nellsemi.com

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

C

PARAMETER

Forward current transfer ratio (DC current gain)

Collector to emitter saturation voltage (Note1)

V

Collector to emitter

voltage (Note 1)

sustaining

SYMBOL

Base to emitter voltage (Note1)

l = 30mA, I =0

C

B

V

= 4V

= 0.3A

CE

C

, I

MAX

1.5

2.0

l = 6A, V

= 4V

C

CE

CONDITIONS

30

l = 6A, l = 0.6A

C

B

MIN

V

= 4V, I = 3A

CE

C

15

75

Note 1. Pulsed : Pulse duration

Note 2. f = |h | • f

T

fe

TEST

Note 3. For PNP type voltage and current are negative.

Off Characteristics

TIP41,TIP42

TIP

A,TIP

A

41

42

40

TIP

B,TIP

B

41

42

TIP

C,TIP

C

41

42

60

80

100

Collector cutoff current

V

= 30V, I = 0

CE

B

V

= 60V, l = 0

CE

B

TIP

B,TIP

B

TIP

C,TIP

C

41

42

41

42

TIP

,TIP

TIP

A,TIP

A

41

42

41

42

0.7

1.0

mA

V

Emitter cutoff current

V

= 5V, I = 0

EB

C

Collector cutoff current

V

= 40V, V

= 0

CE

EB

TIP

,TIP

41

42

TIP

A,TIP

A

41

42

TIP

B,TIP

B

41

42

TIP

C,TIP

C

41

42

V

= 60V, V

= 0

CE

EB

V

= 80V, V

= 0

CE

EB

V

= 100V, V

= 0

CE

EB

400

400

400

400

On Characteristics

µA

Dynamic Characteristics

Current gain - Bandwidth product (note 2)

Small signal current gain

MHz

3.0

20

l = 0.5A, V

= 10V, f

= 1MHz

C

CE

test

l = 0.5A, V

= 10V, f = 1KHz

C

CE

TIP41 (NPN) Series

TIP42 (PNP) Series