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THS4513 Datasheet(PDF) 2 Page - Texas Instruments

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Part # THS4513
Description  WIDEBAND, LOW-NOISE, LOW-DISTORTION, FULLY-DIFFERENTIAL AMPLIFIER
PDF  43 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

THS4513 Datasheet(HTML) 2 Page - Texas Instruments

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THS4509
SLOS454H – JANUARY 2005 – REVISED NOVEMBER 2009
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGING/ORDERING INFORMATION(1)
PACKAGED DEVICES
TEMPERATURE
QUAD QFN(2) (3)
SYMBOL
(RGT-16)
THS4509RGTT
–40°C to +85°C
—
THS4509RGTR
(1)
For the most current package and ordering information see the Package Option Addendum at the end
of this document, or see the TI web site at www.ti.com.
(2)
This package is available taped and reeled. The R suffix standard quantity is 3000. The T suffix
standard quantity is 250.
(3)
The exposed thermal pad is electrically isolated from all other pins.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range, unless otherwise noted.
UNIT
VS– to VS+
Supply voltage
6 V
VI
Input voltage
±VS
VID
Differential input voltage
4 V
IO
Output current(2)
200 mA
Continuous power dissipation
See Dissipation Rating Table
TJ
Maximum junction temperature
+150°C
TA
Operating free-air temperature range
–40°C to +85°C
Tstg
Storage temperature range
–65°C to +150°C
HBM
2000 V
ESD ratings
CDM
1500 V
MM
100 V
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2)
The THS4509 incorporates a (QFN) exposed thermal pad on the underside of the chip. This pad acts as a heatsink and must be
connected to a thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction
temperature which could permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about
using the QFN thermally-enhanced package.
DISSIPATION RATINGS TABLE
POWER RATING
PACKAGE
θJC
θJA
TA ≤ +25°C
TA = +85°C
RGT (16)
2.4°C/W
39.5°C/W
2.3 W
225 mW
2
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Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): THS4509



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