EN

BOOST

SW

FB

GND

C3

L1

C2

R1

R2

D1

D2

ON

OFF

C1

R3

EN

BOOST

SW

FB

GND

C3

L1

C2

R1

R2

D1

D2

ON

OFF

C1

R3

LM2736

SNVS316E – SEPTEMBER 2004 – REVISED SEPTEMBER 2011

www.ti.com

However, making the traces wide increases radiated noise, so the designer must make this trade-off. Radiated

noise can be decreased by choosing a shielded inductor.

The remaining components should also be placed as close as possible to the IC. Please see Application Note

AN-1229 for further considerations and the LM2736 demo board as an example of a four-layer layout.

LM2736X Circuit Examples

Figure 8. LM2736X (1.6MHz)

5V to 1.5V/750mA

Table 1. Bill of Materials for Figure 8

Part ID

Part Value

Part Number

Manufacturer

U1

750mA Buck Regulator

LM2736X

National Semiconductor

C1, Input Cap

10µF, 6.3V, X5R

C3216X5ROJ106M

TDK

C2, Output Cap

10µF, 6.3V, X5R

C3216X5ROJ106M

TDK

C3, Boost Cap

0.01uF, 16V, X7R

C1005X7R1C103K

TDK

D1, Catch Diode

MBRM110L

ON Semi

D2, Boost Diode

1N4148W

Diodes, Inc.

L1

4.7µH, 1.7A,

VLCF4020T- 4R7N1R2

TDK

R1

2k

Ω, 1%

CRCW06032001F

Vishay

R2

10k

Ω, 1%

CRCW06031002F

Vishay

R3

100k

Ω, 1%

CRCW06031003F

Vishay

Figure 9. LM2736X (1.6MHz)

12V to 3.3V/750mA

14

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