Data Sheet D14004EJ2V0DS00

7

2SK3306

PACKAGE DRAWING (Unit: mm)

Isolated TO-220(MP-45F)

1. Gate

2. Drain

3. Source

10.0±0.3

3.2±0.2

2.7±0.2

1.3±0.2

0.7±0.1

2.54

2.54

1.5±0.2

12 3

4.5±0.2

2.5±0.1

0.65±0.1

Remark

Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Drain

5

5

5

5