K3306 datasheet(1/8 Pages) NEC

Part #	K3306

Description	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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Manufacturer	NEC [NEC]

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©

1999

MOS FIELD EFFECT TRANSISTOR

2SK3306

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DATA SHEET

Document No.

D14004EJ2V0DS00 (2nd edition)

Date Published

January 2000 NS CP(K)

Printed in Japan

The mark 5

5

5 shows major revised points.

DESCRIPTION

The 2SK3306 is N-Channel DMOS FET device that features

a low gate charge and excellent switching characteristics, and

designed for high voltage applications such as switching power

supply, AC adapter.

FEATURES

• Low gate charge :

QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)

• Gate voltage rating : ±30 V

• Low on-state resistance :

RDS(on) = 1.5

Ω MAX. (VGS = 10 V, ID = 2.5 A)

• Avalanche capability ratings

• Isolated TO-220(MP-45F) package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

500

V

Gate to Source Voltage (VDS = 0 V)

VGSS(AC)

±30

V

Drain Current (DC)

ID(DC)

±5A

Drain Current (pulse)

Note1

ID(pulse)

±20

A

Total Power Dissipation (TC = 25°C)

PT

35

W

Total Power Dissipation (TA = 25°C)

PT

2.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Single Avalanche Current

Note2

IAS

5.0

A

Single Avalanche Energy

Note2

EAS

125

mJ

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1 %

2. Starting Tch = 25 °C, VDD = 150 V, RG = 25

Ω, VGS = 20 V → 0 V

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3306

Isolated TO-220 (MP-45F)

(Isolated TO-220)

5

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