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N-CHANNEL GaAs MES FET

NE960R2 SERIES

0.2 W X, Ku-BAND POWER GaAs MES FET

Document No. P13775EJ2V0DS00 (2nd edition)

Date Published July 1999 N CP(K)

Printed in Japan

PRELIMINARY DATA SHEET

1998, 1999

©

The mark

shows major revised points.

DESCRIPTION

The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Ku-

band microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear

gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers

etc.

The NE961R200 and the NE960R200 are available in chip form.

The NE960R200 has a via hole source

grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R275 is available in a hermetically

sealed ceramic package. Reliability and performance uniformity are assured by NEC’s stringent quality and control

procedures.

FEATURES

•

High Output Power

•

High Linear Gain

: 10.0 dB TYP.

•

ORDERING INFORMATION

Part Number

Package

Supplying Form

NE960R200

NE961R200

00 (CHIP)

NE960R275

75

ESD protective envelope

Remark To order evaluation samples, please contact your local NEC sales office.

(Part number for sample order: NE960R200, NE960R275, NE961R200)

Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive

device.