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28F800F3 Datasheet(PDF) 13 Page - Intel Corporation

Part # 28F800F3
Description  FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT
PDF  47 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

28F800F3 Datasheet(HTML) 13 Page - Intel Corporation

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E
FAST BOOT BLOCK DATASHEET
13
PRODUCT PREVIEW
3.1.5
RESET
The device enters a reset mode when RST# is
driven low. In reset mode, internal circuitry is turned
off and outputs are placed in a high-impedance
state.
After return from reset, a time tPHQV is required until
outputs are valid, and a delay (tPHWL or tPHEL) is
required before a write sequence can be initiated.
After this wake-up interval, normal operation is
restored. The device defaults to read array mode,
the status register is set to 80H, and the read
configuration register defaults to asynchronous
page-mode reads.
If RP# is taken low during a block erase or program
operation, the operation will be aborted and the
memory contents at the aborted location are no
longer valid. See Figure 21 for detailed information
regarding reset timings.
4.0
COMMAND DEFINITIONS
Device operations are selected by writing specific
commands into the CUI. Table 3 defines these
commands.
Table 2. Bus Operations
Mode
Notes
RST#
CE#
ADV#
OE#
WE#
Address
VPP
DQ0–15
Reset
VIL
XXXXXX
High Z
Standby
VIH
VIH
XXXXX
High Z
Output Disable
VIH
VIL
XVIH
VIH
X
X
High Z
Read
1,2
VIH
VIL
VIL
VIL
VIH
XX
DOUT
Read Identifier
Codes
VIH
VIL
VIL
VIL
VIH
See
Table 4
X
See
Table 4
Write
3,4
VIH
VIL
VIL
VIH
VIL
XX
DIN
NOTES:
1.
Refer to
DC Characteristics. When VPP
≤ VPPLK, memory contents can be read, but not altered.
2.
X can be V
IL or VIH for control and address input pins and VPPLK or VPPH1/2 for VPP. See DC Characteristics for VPPLK and
VPPH1/2 voltages.
3.
Command writes involving block erase or program are reliably executed when VPP = VPPH1/2 and VCC = VCC1/2
(see Section 8 for operating conditions at different temperatures).
4.
Refer to Table 3 for valid DIN during a write operation.



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