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28F800F3 Datasheet(PDF) 13 Page - Intel Corporation |
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28F800F3 Datasheet(HTML) 13 Page - Intel Corporation |
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13 / 47 page ![]() E FAST BOOT BLOCK DATASHEET 13 PRODUCT PREVIEW 3.1.5 RESET The device enters a reset mode when RST# is driven low. In reset mode, internal circuitry is turned off and outputs are placed in a high-impedance state. After return from reset, a time tPHQV is required until outputs are valid, and a delay (tPHWL or tPHEL) is required before a write sequence can be initiated. After this wake-up interval, normal operation is restored. The device defaults to read array mode, the status register is set to 80H, and the read configuration register defaults to asynchronous page-mode reads. If RP# is taken low during a block erase or program operation, the operation will be aborted and the memory contents at the aborted location are no longer valid. See Figure 21 for detailed information regarding reset timings. 4.0 COMMAND DEFINITIONS Device operations are selected by writing specific commands into the CUI. Table 3 defines these commands. Table 2. Bus Operations Mode Notes RST# CE# ADV# OE# WE# Address VPP DQ0–15 Reset VIL XXXXXX High Z Standby VIH VIH XXXXX High Z Output Disable VIH VIL XVIH VIH X X High Z Read 1,2 VIH VIL VIL VIL VIH XX DOUT Read Identifier Codes VIH VIL VIL VIL VIH See Table 4 X See Table 4 Write 3,4 VIH VIL VIL VIH VIL XX DIN NOTES: 1. Refer to DC Characteristics. When VPP ≤ VPPLK, memory contents can be read, but not altered. 2. X can be V IL or VIH for control and address input pins and VPPLK or VPPH1/2 for VPP. See DC Characteristics for VPPLK and VPPH1/2 voltages. 3. Command writes involving block erase or program are reliably executed when VPP = VPPH1/2 and VCC = VCC1/2 (see Section 8 for operating conditions at different temperatures). 4. Refer to Table 3 for valid DIN during a write operation. |
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