UPA607 datasheet(4/6 Pages) NEC

4 / 6 page

µPA607T

DRAIN TO SOURCE ON-STATE RESISTANCE

vs. GATE TO SOURCE VOLTAGE

VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE

vs.DRAIN CURRENT

ID - Drain Current - mA

DRAIN TO SOURCE ON-STATE RESISTANCE

vs. CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

ID - Drain Current - mA

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

VSD - Source to Drain Voltage - V

–20

–4

–8

–12

–16

100

ID = –1 mA

Pulsed

measurement

–10 mA

–1

–100

–2

–5

–10

–20

–50

150

100

VGS = –4 V

Pulsed

measurement

TA = 150 ˚C

75 ˚C

25 ˚C

–25 ˚C

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE

150

120

140

120

100

VGS = –4 V

ID = –10 mA

–30

–100

–1

–10

–50

100

0.3

0.5

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

0.1

–2

–5

–20

–500

–20

–50

–100

–200

500

200

100

–10

–5

VDD = –5.0 V

VGS = –4 V

RG = 10

Ω

td(on)

td(off)

–1.0

–0.7

–0.8

–0.9

–100

–10

–1

–0.1

–0.6

–0.5

VGS = 0

Pulsed

measurement

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