©

1996

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

The

µPA607T is a mini-mold device provided with two

MOS FET elements. It achieves high-density mounting

and saves mounting costs.

FEATURES

•

Two MOS FET elements in package the same size as

SC-59

•

Complement to

µPA606T

•

Automatic mounting supported

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

–50

V

Gate to Source Voltage

+16

V

Drain Current (DC)

–100

mA

Drain Current (pulse)

–200

mA

Total Power Dissipation

300 (Total)

mW

Channel Temperature

150

˚C

Storage Temperature

–55 to +150

˚C

* PW

≤ 10 ms, Duty Cycle ≤ 50 %

Document No. G11254EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

PACKAGE DIMENSIONS (in millimeters)

0.32

+0.1

–0.05

0.16

+0.1

–0.06

0.95

1.9

0.8

2.9 ±0.2

1.1 to 1.4

0 to 0.1

0.95

PIN CONNECTION

654

123

1. Source 1

2. Gate 1

3. Drain 2

4. Source 2

5. Gate 2

6. Drain 1

P-CHANNEL MOS FET (6-PIN 2 CIRCUITS)

FOR SWITCHING