HIP5061 datasheet(2/20 Pages) INTERSIL

2 / 20 page

7-54

Speciﬁcations HIP5061

Absolute Maximum Ratings (Note 1)

Thermal Information

DC Supply Voltage, VDD. . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 16V

DC Supply Current, IDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105mA

DMOS Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 60V

Average DMOS Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A

DMOS Source Voltage, VSOURCE, TAB . . . . . . . . . . . . -0.1V to 0.1V

DC Supply Voltage, VG. . . . . . . . . . . . . . . . . . . .-0.3V to VDD + 0.3V

Compensation Pin Current, IVC . . . . . . . . . . . . . . . . . -5mA to 35mA

Voltage at All Other Pins. . . . . . . . . . . . . . . . . . .-0.3V to VDD + 0.3V

Operating Junction Temperature Range. . . . . . . . . . . 0oC to +105oC

Storage Temperature Range . . . . . . . . . . . . . . . . . -55oC to +150oC

ESD Classiﬁcation . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 2 - 2KV

Single Pulse Avalanche Energy Rating,

µs (Note 2) . . . EAS 100mJ

Thermal Resistance

Plastic SIP Package . . . . . . . . . . . . . . . . . . . . . . . .

2oC/W

Maximum Package Power Dissipation at +85oC

(Depends Upon Mounting, Heat Sink and Application) . . . . . 10W

Max. Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . +105oC

(Controlled By Thermal Shutdown Circuit)

Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +265oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations

VDD = VG =12V, VC = 5V, VFB = 5.1V, SOURCE = GND = DRAIN = 0V, TJ = 0

oC to +105oC,

Unless Otherwise Speciﬁed

SYMBOL

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNITS

DEVICE PARAMETERS

IDD

Quiescent Supply Current

VDD = VG = 13.2V, VC = 0V,

VFB = 4V

612

IDD

Operating Supply Current

VDD = VG = 13.2V, VC = 8.5V, VFB = 4V

IVG

Quiescent Current to Gate Driver

VDD = VG = 13.2V, VC = 0V

µA

IVG

Operating Current to Gate Driver

VC = 3V

VDDC

Clamp Voltage

IDD = 100mA

13.3

VREF

Reference Voltage

IVC = 0µA, VC = VFB

5.0

5.1

5.2

AMPLIFIERS

|IFB|

Input Current

VFB = VREF

-0.85

0.5

µA

gm (VFB)VFB Transconductance

IVC/(VFB - VREF)

/IVC / = 500µA, Note 3

IVCMAX

Maximum Source Current

VFB = 4.6V

-4

-1.8

-1

IVCMAX

Maximum Sink Current

VFB = 5.6V

1.8

AOL

Voltage Gain

/IVC / = 500µA, Note 3

VCMAX

Short Circuit Recovery Compara-

tor Rising Threshold Voltage

5.4

6.6

8.9

VCHYS

Short Circuit Recovery

Comparator Hysteresis Voltage

0.7

1.1

1.8

IVCOVER

VC Over-Voltage Current

VDD = VG = 10.8V, VC = VCMAX

010

CLOCK

Internal Clock Frequency

210

250

290

kHz

DMOS TRANSISTOR

rDS(ON)

Drain-Source On-State

Resistance

IDRAIN = 5A, VDD = VG = 10.8V

TJ = +25

0.15

0.22

Ω

rDS(ON)

Drain-Source On-State

Resistance

IDRAIN = 5A, VDD = VG = 10.8V

TJ = +105

0.33

Ω

IDSS

Drain-Source Leakage Current

VDRAIN = 60V

0.5

µA

IDSH

Average Drain Short Circuit

Current

VDRAIN = 5V, Note 4

CDRAIN

DRAIN Capacitance

Note 4

200

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