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KX6P02 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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KX6P02 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 5 page  SMD Type www.kexin.com.cn 1 MOSFET P-Channel Enhancement MOSFET KX6P02 ■ Features ● VDS (V) =-20V ● Low ON-resitance: 1. Gate 2. 3. ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current *1 ID -6.0 Pulsed Drain Current *2 IDM -24 Power Dissipation *3 1 Power Dissipation t=10s 2 Junction Temperature TJ 150 Junction and Storage Temperature Range Tst g -55 to 150 *1 The channel temperature should not exceed 150°C during use. *2 PW ≦ 10μs,Duty ≦ 1％ *3 Mounted on a FR4 board. V A ℃ PD W RD S (O N ) =88.4mΩ (VGS =-1.5V) RD S (O N ) = 56mΩ (VGS =-1.8V) RD S (O N ) =39.7mΩ (VGS =-2.5V) RD S (O N ) = 29.8mΩ VGS = -4.5 V) Source Drain 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 1 2 3 Unit: mm SOT-23-3 0.15 +0.02 -0.02 |
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