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KX6P02 Datasheet(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

Part # KX6P02
Description  P-Channel Enhancement MOSFET
PDF  5 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

KX6P02 Datasheet(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd

  KX6P02 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd KX6P02 Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd KX6P02 Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd KX6P02 Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd KX6P02 Datasheet HTML 5Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
3
MOSFET
■
Typical Characterisitics
P-Channel Enhancement MOSFET
KX6P02
0
-2
-4
-6
0
RDS (ON) – VGS
-8
60
−
25 °C
25 °C
140
Ta = 100 °C
120
80
40
20
ID =-0.5A
Common Source
Pulse test
100
ID – VGS
-100
-0.0001
0
-1
-10
-0.01
-0.1
-0.001
-2.0
−
25 °C
Common Source
VDS = -3 V
Pulse test
Ta = 100 °C
25 °C
-0.5
-1.5
-1.0
RDS (ON) – Ta
120
0
−
50
ID = -0.5 A / VGS = -1.5 V
0
5
1
0
5
0
20
40
60
80
100
-2.5 A / -2.5 V
-3.0 A / -4.5 V
-1.5 A / -1.8 V
140
Drain–source voltage VDS (V)
ID – VDS
0
-10
0
-0.2
-0.6
-0.8
-1
-6
-2
-4
Common Source
Ta = 25 °C
Pulse test
-1.8 V
-2.5 V
-0.4
VGS =-4.5 V
-8
RDS (ON) – VGS
RDS (ON) – ID
-1.5 V
0
-2
-4
-6
0
-8
60
−
25 °C
25 °C
140
Ta = 100 °C
120
80
40
20
ID =-2.5A
Common Source
Pulse test
100
-8.0
0
-2.0
-4.0
0
-6.0
140
-1.5 V
-2.5 V
-1.8 V
120
100
80
40
20
60
-4.5 V
-10.0
100
Gate–source voltage VGS (V)
Gate–source voltage VGS (V)
Gate–source voltage VGS (V)
Drain current ID (A)
Ambient temperature Ta (°C)
Common Source
Ta = 25°C
Pulse test
Common Source
Pulse test



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