KX6P02 datasheet(2/5 Pages) KEXIN

2 / 5 page

SMD Type

www.kexin.com.cn

MOSFET

P-Channel Enhancement MOSFET

KX6P02

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ Max Unit

VDSS

ID= -1mA, VGS=0V

-20

VDS

ID= -1mA, VGS=5V *1

-15

Zero Gate Voltage Drain Current

IDSS

VDS=-20V, VGS=0V

-1

Gate-Body leakage current

IGSS

VDS= ± 8V, VGS=0V

Gate Threshold Voltage

VGS(off) VDS

=-3V ID=-1mA

-0.3

-1.0

Forward transfer admittance

gfs

V = -3 V, ID = -1.0 A *2

4.5

9.1

VGS=-4.5V, ID=-3.0A

24.9 29..8

VGS=-2.5V, ID=-2.5A

31.1 39.7

VGS=-1.8V, ID=-1.5A

38.8

VGS=-1.5V, ID=-0.5A

47.4 88.4

Input Capacitance

Ci ss

840

Output Capacitance

Co ss

118

Reverse Transfer Capacitance

Crss

Total Gate Charge

12.8

Gate Source Charge

Qgs

1.4

Gate Drain Charge

Qgd

3.0

Turn-On DelayTime

td(on)

Turn-Off DelayTime

td(off)

107

Diode Forward Voltage

VSD

ID=6.0 A,VGS=0V

0.87 1.2

mΩ

VGS=0 to -2.5V, VDD=-10V, ID=-2.0A,RGEN=4.7Ω

RDS(On)

Drain-Source Breakdown Voltage

VGS=0V,VDS=-10V, f=1MHz

VGS=-4.5V,VDD=-10V, IDS=-4A

Static Drain-Source On-Resistance

*1 VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximun

rating of drain-source voltage

*2 Pulse test

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Marking

KFH

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