KX6P02 datasheet(4/5 Pages) KEXIN

4 / 5 page

SMD Type

www.kexin.com.cn

MOSFET

P-Channel Enhancement MOSFET

KX6P02

■

Typical Characterisitics

|Yfs| – ID

0.1

-100

1.0

100

-0.1

-1

-10

0.3

3.0

C – VDS

-2

-8

-6

-4

Common Source

ID = -4.0 A

Ta = 25 °C

Vth – Ta

-0.8

−

150

-0.2

-0.4

-0.6

-1.0

100

VDD = -10 V

VDD = -16 V

t – ID

IDR – VDS

100

0.01

0.1

0.001

0.2

0.6

0.4

1.0

0.8

1.2

Common Source

VGS = 0 V

Ta = 25 °C

Pulse test

IDR

100 °C

25 °C

−

25 °C

Common Source

VDS = -3 V

Ta = 25 °C

Pluse test

-0.01

Common Source

VDS = -3 V

ID = -1 mA

-0.1

-1

-10

-100

1000

10000

3000

5000

300

500

100

Ciss

Crss

Coss

Common Source

Ta= 25 °C

f = 1 MHz

VGS = 0 V

-0.001

1000

-0.1

10000

-1

-10

100

Common Source

VDD = -10 V

VGS = 0 to -2.5 V

Ta = 25 °C

RG = 4.7Ω

-0.01

toff

ton

Ambient temperature Ta (°C)

Drain current ID (A)

Drain–source voltage VDS (V)

Total Gate Charge Qg (nC)

Dynamic Input Characteristic

Drain current ID (A)

Drain–source voltage VDS (V)

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