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ASW318 Datasheet(PDF) 1 Page - Advanced Semiconductor Business Inc. |
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ASW318 Datasheet(HTML) 1 Page - Advanced Semiconductor Business Inc. |
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1 / 23 page ![]() 1/23 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 December 2014 ASW318 5 ~ 4000 MHz MMIC Amplifier (Supply Voltage = +8 V, TA = +25 C, Z0 = 50 ) Parameters Units Typical Frequency MHz 900 1950 Gain dB 16.5 15.0 S11 dB -20 -15 S22 dB -18 -11 Output IP31) dBm 47.0 45.5 Noise Figure dB 2.3 3.3 Output P1dB dBm 26 26 Current mA 120 120 Device Voltage V +8 +8 1) OIP3 is measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. Parameters Units Min Typ Max Testing Frequency MHz 900 Gain dB 16.5 S11 dB -20 S22 dB -18 Output IP3 dBm 47 Noise Figure dB 2.3 Output P1dB dBm 26 Current mA 120 Device Voltage V +8 Parameters Rating Operating Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +9 V Operating Junction Temperature +150 C Input RF Power (CW, 50 matched) 2), * +26 dBm 2) Range is in 22 ~ 26 dBm for 50 ~ 1950 MHz. * Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf Features Description Absolute Maximum Ratings 16.5 dB Gain at 900 MHz 26 dBm P1dB at 900 MHz 47 dBm Output IP3 at 900 MHz MTTF > 100 Years Single Supply The ASW318, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both re- ceiver and transmitter of telecommunication systems up to 4 GHz. The amplifier is available in a SOT89 package and passes through the stringent DC, RF, and reliability tests. Product Specifications Typical Performance ASW318 Package Style: SOT89 Pin Configuration Pin No. Function 1 RF IN 2 GND 3 RF OUT & Bias Application Circuit IF (80 ~ 300 MHz) IF (30 ~ 512 MHz) LTE (698 ~ 787 MHz) CMMB 900 MHz LTE (1745 ~ 1860 MHz) WCDMA 50 ~ 1500 MHz 350 ~ 3000 MHz 470 ~ 2400 MHz 350 ~ 2500 MHz 70 ~ 2700 MHz CDMA (6 V) WCDMA (6 V) 960 ~ 1200 MHz 50 ~ 2700 MHz (75 ) |
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