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ASW318 Datasheet(PDF) 11 Page - Advanced Semiconductor Business Inc. |
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ASW318 Datasheet(HTML) 11 Page - Advanced Semiconductor Business Inc. |
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11 / 23 page ![]() 11/23 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 December 2014 ASW318 5 ~ 4000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 1745 1860 Magnitude S21 (dB) 14.5 14.5 Magnitude S11 (dB) -18 -18 Magnitude S22 (dB) -10 -10 Output P1dB (dBm) 25 25 Output IP31) (dBm) 45 45 Noise Figure (dB) 2.9 2.9 Device Voltage (V) +8 +8 Current (mA) 120 120 LTE 1745 ~ 1860 MHz +8 V 1500 1600 1700 1800 1900 2000 2100 0 5 10 15 20 Frequency (MHz) 1500 1600 1700 1800 1900 2000 2100 -30 -25 -20 -15 -10 -5 0 Frequency (MHz) 1500 1600 1700 1800 1900 2000 2100 -20 -15 -10 -5 0 Frequency (MHz) L2=1.8 nH RF IN RF OUT ASW318 Vcc=8 V C2=3.9 pF C5=68 pF C6=1 F C1=0.5 pF L1=2.7 nH C3=100 pF 0.8 mm C4=1.5 pF |
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