IRF7601

PD - 9.1261D

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The new Micro8 package, with half the footprint area of the

standard SO-8, provides the smallest footprint available in

an SOIC outline. This makes the Micro8 an ideal device for

applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro8 will allow

it to fit easily into extremely thin application environments

such as portable electronics and PCMCIA cards.

Top V iew

8

1

2

3

4

5

6

7

D

D

D

D

G

S

A

S

S

A

Description

8/25/97

Micro8

Parameter

Max.

Units

5.7

4.6

A

Pulsed Drain Current



30

Power Dissipation

1.8

W

Linear Derating Factor

14

mW/°C

Gate-to-Source Voltage

± 12

V

dv/dt

Peak Diode Recovery dv/dt

‚

5.0

V/ns

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Maximum Junction-to-Ambient

„

–––

70

°C/W

Thermal Resistance

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

only for product marked with Date Code 505 or later .