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LTC3413 Datasheet(PDF) 3 Page - Linear Technology |
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LTC3413 Datasheet(HTML) 3 Page - Linear Technology |
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3 / 16 page ![]() LTC3413 3 3413fc ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VIN = 3.3V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS fOSC Switching Frequency Switching Frequency Range ROSC = 309k (Note 6) 0.88 0.30 1.00 1.12 2.00 MHz MHz RPFET RDS(ON) of P-Channel FET ISW = 300mA 85 110 mΩ RNFET RDS(ON) of N-Channel FET ISW = 300mA 65 90 mΩ ILIMIT Peak Current Limit 3.8 5.4 A VUVLO Undervoltage Lockout Threshold 1.75 2 2.25 V ILSW SW Leakage Current VRUN = 0V, VIN = 5.5V (Note 7) 0.1 1 μA VRUN RUN Threshold 0.5 0.65 0.8 V Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC3413E is guaranteed to meet performance specifications from 0°C to 70°C. Specifications over the –40°C to 85°C operating temperature range are assured by design, characterization and correlation with statistical process controls. LTC3413I is guaranteed to meet specified performance from –40°C to 85°C. Note 3: The LTC3413 is tested in a feedback loop that adjusts VFB to achieve a specified error amplifier output voltage (ITH). Note 4: Dynamic supply current is higher due to the internal gate charge being delivered at the switching frequency. TYPICAL PERFORMANCE CHARACTERISTICS Efficiency vs Load Current Efficiency vs Input Voltage Load Regulation LOAD CURRENT (A) 0.01 40 50 60 70 80 0.1 1 10 3413 G01 30 20 10 0 90 100 VIN = 2.5V VOUT = 1.25V TA = 25°C VIN = 3.3V INPUT VOLTAGE (V) 2.5 50 60 70 4.0 5.0 3413 G02 40 30 20 3.0 3.5 4.5 80 90 100 5.5 LOAD = 1A LOAD = 3A LOAD = 100mA VOUT = 1.25V TA = 25°C LOAD CURRENT (A) 0 –0.30 –0.25 –0.20 –0.15 –0.10 0 0.5 1.0 1.5 2.0 3413 G03 2.5 3.0 –0.05 TA = 25°C Note 5: TJ is calculated from the ambient temperature TA and power dissipation PD as follows: LTC3413E: TJ = TA + (PD • 38°C/W) Note 6: 2MHz operation is guaranteed by design and not production tested. Note 7: Shutdown current and SW leakage current are only tested during wafer sort. Note 8: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperature will exceed 125°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair device reliability. |
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