| Electronic Components Datasheet Search |
|
LTC1149CS Datasheet(PDF) 12 Page - Linear Technology |
|
|
|||||||||||||||||||||||||||||
LTC1149CS Datasheet(HTML) 12 Page - Linear Technology |
|
12 / 20 page ![]() 12 LTC1149 LTC1149-3.3/LTC1149-5 APPLICATIO S I FOR ATIO the ground side of the output to prevent the absolute maximum voltage ratings of the sense pins from being exceeded. This is shown in Figure 5. When the current sense comparator is operating at 0V common mode, the off-time increases approximately 40%, requiring the use of a smaller timing capacitor CT. Efficiency Considerations The percent efficiency of a switching regulator is equal to the output power divided by the input power times 100%. It is often useful to analyze individual losses to determine what is limiting the efficiency and which change would produce the most improvement. Percent efficiency can be expressed as: %Efficiency = 100 – (L1 + L2 + L3 + ...) where L1, L2, etc., are the individual losses as a percent- age of input power. (For high efficiency circuits only small errors are incurred by expressing losses as a percentage of output power.) Although all dissipative elements in the circuit produce losses, four main sources usually account for most of the losses in LTC1149 series circuits: 1) LTC1149 DC supply current, 2) MOSFET gate charge current, 3) I 2R losses and 4) P-channel transition losses. 1. The DC supply current is the current which flows into VIN Pin 2 less the gate charge current. For VIN = 12V the LTC1149 DC supply current is 0.6mA for no load, and increases proportionally with load up to 2mA after the LTC1149 series has entered continuous mode. Because the DC supply current is drawn from VIN, the resulting loss increases with input voltage. For VIN = 24V, the DC bias losses are generally less than 3% for load currents over 300mA. However, at very low load currents the DC bias current accounts for nearly all of the loss. 2. MOSFET gate charge current results from switching the gate capacitance of the power MOSFETs. Each time a MOSFET gate is switched from low to high to low again, a packet of charge dQ moves from VIN to ground. The resulting dQ/dt is a current out of VIN which is typically much larger than the DC supply current. In continuous mode, IGATECHG = f (QN + QP). The typical gate charge for a 0.1 Ω N-channel power MOSFET is 25nC, and for a P-channel about twice that value. This results in IGATECHG = 7.5mA in 100kHz continuous operation, for a 5% to 10% typical mid-current loss with VIN = 24V. Note that the gate charge loss increases directly with both input voltage and operating frequency. This is the principal reason why the highest efficiency circuits operate at moderate frequencies. Furthermore, it argues against using larger MOSFETs than necessary to control I 2R losses, since overkill can cost efficiency as well as money! 3. I 2R losses are easily predicted from the DC resistances of the MOSFET, inductor and current shunt. In continu- ous mode all of the output current flows through L and RSENSE, but is “chopped” between the P-channel and N-channel MOSFETs. If the two MOSFETs have approximately the same RDS(ON), then the resistance of one MOSFET can simply be summed with the resis- tances of L and RSENSE to obtain I2R losses. For example, if each RDS(ON) = 0.1Ω, RL = 0.15Ω and RSENSE = 0.05Ω, then the total resistance is 0.3Ω. This results in losses ranging from 3% to 12% as the output current increases from 0.5A to 2A. I2R losses cause the efficiency to roll-off at high output currents. 4. Transition losses apply only to the P-channel MOSFET, and only when operating at high input voltages (typi- cally 24V or greater). Transition losses can be esti- mated from: Transition Loss ≈ 5(VIN)2(IMAX)(CRSS)(f) For example, if VIN = 48V, IMAX = 2A, CRSS = 300pF (a very large MOSFET) and f = 100kHz, the transition loss is 0.7W. A loss of this magnitude would not only kill efficiency but would probably require additional heat sinking for the MOSFET! See Design Example for further guidelines on how to select the P-channel MOSFET. Other losses including CIN and COUT ESR dissipative losses, Schottky conduction losses during dead-time, and inductor core losses, generally account for less than 2% total additional loss. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |