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LTC4063 Datasheet(PDF) 3 Page - Linear Technology |
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LTC4063 Datasheet(HTML) 3 Page - Linear Technology |
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3 / 20 page ![]() LTC4063 4063fc elecTrical characTerisTics Note1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note2: The LTC4063EDD is guaranteed to meet performance specifications from 0°C to 70°C. Specifications over the –40°C to 85°C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note3: Failure to correctly solder the Exposed Pad of the package to the PC board will result in a thermal resistance much higher than 40°C/W. Note4: Supply current includes PROG pin current and IDET pin current (approximately 100µA each) but does not include any current delivered to SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS RCHGEN CHGEN Pin Pull-Down Resistor l 1.2 2 5 MΩ VCT Charge Termination Mode Threshold Voltage VTIMER from High to Low Hysteresis 0.4 0.7 100 1 V mV VUT User Termination Mode Threshold Voltage VTIMER from Low to High Hysteresis 4.15 4.1 100 4.5 V mV IDETECT Charge Current Detection Threshold RDET = 1k, 0°C ≤ TA ≤ 85°C RDET = 2k, 0°C ≤ TA ≤ 85°C RDET = 10k, 0°C ≤ TA ≤ 85°C RDET = 20k, 0°C ≤ TA ≤ 85°C 90 45 8.5 4 100 50 10 5 110 55 11.5 6 mA mA mA mA ∆VRECHRG Recharge Threshold Voltage VFLOAT – VRECHRG, 0°C ≤ TA ≤ 85°C 75 100 125 mV tTERM Termination Comparator Filter Time Current Termination Mode 1 1.5 2.2 ms tRECHRG Recharge Comparator Filter Time 3 7 14 ms tTIMER Charge Cycle Time CTIMER = 0.1µF 2.55 3 3.45 Hour tSS Soft-Start Time IBAT from 0 to ICHG 100 µs TLIM Junction Temperature in Constant Temperature Mode 105 °C RON Power FET On-Resistance (Between VCC and BAT) 375 mΩ VBAT-LDO LDO Supply Voltage (BAT) 2.65 4.4 V IBAT-LDO LDO Supply Current (from BAT) VCC < VBAT, IOUT = 0mA VCC > VBAT, IOUT = 0mA (Note 6) 15 9 25 18 µA µA IBAT-LDO-SD LDO Supply Current in Shutdown VBAT = 4.4V 2.5 5 µA VFB FB Regulated Voltage VBAT = 3.7V, IOUT = 1mA l 784 800 816 mV VFB(LINE) VFB Line Regulation VBAT = 2.65V to 4.4V, IOUT = 1mA l 1 4 mV VFB(LOAD) VFB Load Regulation IOUT = 1mA to 100mA, VBAT = 4.4V l 1 4 mV VLDOEN LDOEN Input Threshold Voltage (Rising) LDOEN Rising, VBAT = 4.4V Hysteresis 0.4 0.7 100 1 V mV RLDOEN LDOEN Pin Pull-Down Resistor l 1.2 2 5 MΩ VDO LDO Dropout Voltage IOUT = 100mA, VOUT = 3V 125 200 mV VLDOUVLO LDO Undervoltage Lockout Threshold VBAT from High to Low Hysteresis 2.45 2.55 100 2.65 V mV IFB FB Pin Current –25 0 25 nA ISC Short-Circuit Output Current VOUT = 0V 500 mA VNO(RMS) Output Voltage Noise VOUT = 3V, IOUT = 100mA, COUT = 2.2µF, 10Hz ≤ f ≤ 100kHz 135 µVRMS Theldenotesthespecificationswhichapplyoverthefulloperating temperaturerange,otherwisespecificationsareatTA=25°C.VCC=5V,unlessotherwisenoted. the battery through the BAT pin (approximately 100mA). Note5: Does not include LDO supply current. Note6: The LDO is partially powered from VCC, thus reducing the supply current from the BAT pin. Note7: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Overtemperature protection will become active at a junction temperature greater than the maximum operating temperature. Continuous operation above the specified maximum operating junction temperature may impair device reliability. Note8: Defined by long term current density limitations. |
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