1 of 11

Optimum Technology Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

LDMOS

GAIN SELECT2

Logic

Control

1

2

3

6

5

4

8

7

12

11

10

9

15

16

13

14

GND

RFOUT2

N/C

N/C

RFOUT1

GND

GAIN SEL1

Logic

Control

RF3857

DUAL CHANNEL LNA WITH BYPASS MODE

The RF3857 is a dual channel switchable low noise amplifier with a very

high dynamic range designed for digital cellular, WiMAX, and WiFi applica-

tions. The device functions as an outstanding front end low noise ampli-

fier. The bias current may be set externally. The RF3857 combines two

receive paths, which is ideal in an application that requires two receive

paths, such as 1x2 and 2x2 MIMO for both WiFi and WiMax aplications.

The IC is featured in a standard QFN, 16-pin, 3mmx3mm plastic package.

Features



Low Noise and High Intercept

Point



Adjustable Bias Current



Power Down Control



Low Insertion Loss Bypass

Feature



1.8V to 4V Operation (See

“Bias Note” on Page 3)



0.9GHz to 4.0GHz Operation

Applications



WiFi LNA with Bypass Feature



WiMAX LNA with Bypass Fea-

ture



CDMA PCS LNA with Bypass

Feature



Suitable for 1x2 or 2x1

MIMO Applications



Commercial and Consumer

Systems

DS110616



Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm