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RFCM3316 Datasheet(PDF) 1 Page - RF Micro Devices |
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RFCM3316 Datasheet(HTML) 1 Page - RF Micro Devices |
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1 / 8 page ![]() RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS141006 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. RF MICRO DEVICES ® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 8 RFCM3316 45-1218MHZ GAAS/GAN POWER DOUBLER MODULE The RFCM3316 is a Power Doubler amplifier SMD Module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and is operated from 45MHz to 1218MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. DC current of the device can be externally adjusted for optimum distortion performance versus power consumption over a wide range of output level. RFCM3316 INPUT OUTPUT Current Setting V+ Temperature Sensing Functional Block Diagram Ordering Information RFCM3316SB Sample bag with 5 pieces RFCM3316SQ Sample bag with 25 pieces RFCM3316SR 7” Reel with 100 pieces RFCM3316TR7 7” Reel with 500 pieces RFCM3316TR13 13” Reel with 1000 pieces RFCM3316PCBA-410 Fully Assembled Evaluation Board Package: 9 pin, 9.0 mm x 8.0 mm x 1.375mm Features Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Low Noise Unconditionally Stable Under all Terminations Extremely High Output Capability 22.5dB Min. Gain at 1218MHz 450mA Max. at 24VDC Temperature Sensing Feature Applications 45MHz to 1218MHz CATV Amplifier Systems |
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Similar Description - RFCM3316 |
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