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RFPA2013 Datasheet(PDF) 18 Page - RF Micro Devices

Part # RFPA2013
Description  GaAs HBT Power Amplifier 0.5W, 400MHz to 2700MHz
PDF  20 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFPA2013 Datasheet(HTML) 18 Page - RF Micro Devices

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RFPA2013
DS130219
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ((+1) 336-678-5570 or c
customerservice@rfmd.com.
Pin Names and Description
Pin Out
Pin
Function
Description
1NC
No internal connection. EVB can be ground or no connect.
2RFIN
RF input. External DC block is required.
3RFIN
RF input. External DC block is required.
4NC
No internal connection. EVB can be ground or no connect.
5NC
No internal connection. EVB can be ground or no connect.
6NC
No internal connection. EVB can be ground or no connect.
7NC
No internal connection. EVB can be ground or no connect.
8NC
No internal connection. EVB can be ground or no connect.
9NC
No internal connection. EVB can be ground or no connect.
10
RFOUT/VCC
RF output and collector bias
11
RFOUT/VCC
RF output and collector bias
12
NC
No internal connection. EVB can be ground or no connect.
13
VBIAS
Supply voltage for the active bias circuit
14
NC
No internal connection. EVB can be ground or no connect.
15
VREF
Bias control pin. Can also be used as a power-down pin.
16
NC
No internal connection. EVB can be ground or no connect.
EPAD
GND
DC and RF ground. Must be soldered to EVB ground plane over a bed of vias for thermal and RF perfor-
mance. Solder/epoxy voids under the EPAD will result in excessive junction temperatures causing perma-
nent damage.
RFIN
NC
RFIN
NC
NC
1
2
3
4
NC
13
14
15
16
12
11
10
9
RFOUT/VCC
RFOUT/VCC
8
7
6
5
BIAS
CIRCUIT



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