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RT6208 Datasheet(PDF) 3 Page - Richtek Technology Corporation |
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RT6208 Datasheet(HTML) 3 Page - Richtek Technology Corporation |
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3 / 17 page ![]() RT6208 Copyright © 2015 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation. DS6208-00 May 2015 www.richtek.com 3 Function Block Diagram FB Comparator Internal Regulator Shutdown Comparator VIN GND SW FB EN 6V 5k HS Switch Current Comparator 0.8V Logic & Deadtime Control 1.21 LS Switch Current Comparator UVLO Current Sense Current Sense 1ms Ramp 2 μA 2V ISET PGOOD Generator PGOOD 1 μA VCC + - + + - AGND Operation The RT6208 is a step-down DC/DC converter with internal power switches that uses Hysteresis Mode control, combining low quiescent current, which results in high efficiency across a wide range of load currents. Hysteresis Mode operation functions by using Boundary Conduction Mode (BCM) to ramp the inductor current through the internal power switches, followed by a sleep cycle where the power switches are off and the load current is supplied by the output capacitor. During the sleep cycle, the RT6208 draws only 25 A of supply current. At light loads, the BCM cycles are a small percentage of the total cycle time which minimizes the average supply current, greatly improving efficiency. Scheme of Hysteresis Mode The feedback comparator monitors the voltage on the VFB pin and compares it to an internal 800mV reference, as shown in Figure 1. If this voltage is greater than the reference, the comparator activates a sleep mode in which the power switches and current comparators are disabled, reducing the VIN pin supply current to only 25 A. As the load current discharges the output capacitor, the voltage on the VFB pin decreases. When this voltage falls 5mV below the 800mV reference, the feedback comparator trips and enables BCM. At the beginning of the BCM, the internal high-side power switch (P-channel MOSFET) is turned on and the inductor current begins to ramp up. The inductor current increases until either the current exceeds the peak current comparator threshold, or the ON time of the high-side MOSFET exceeds 5 μs during the time VFB is higher than 800mV, at which the high-side power switch is turned off, and the Low-side power switch is turned on. The inductor current ramps down until the reverse current is close to zero. If the voltage on the VFB pin is still less than the 800mV reference, the high-side power switch is turned on again and another cycle commences which keep the inductor current operated in a boundary conduction mode. The average current during the BCM will normally be greater than the average load current. For this architecture, the maximum average output current |
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