The RF MOSFET Line

Power Field Effect Transistor

N–Channel Enhancement–Mode MOSFET

Designed primarily for wideband large–signal output and driver stages to

30 – 500 MHz.

• Push–Pull Configuration Reduces Even Numbered Harmonics

• Guaranteed Performance at 500 MHz, 28 Vdc

Output Power = 40 Watts

Gain = 14 dB

Efficiency = 50%

• Typical Performance at 175 MHz, 28 Vdc

Output Power = 40 Watts

Gain = 17 dB

Efficiency = 60%

• Excellent Thermal Stability, Ideally Suited for Class A Operation

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR

• Low Crss — 4.0 pF @ VDS = 28 Volts

Rating

Symbol

Value

Unit

Drain–Gate Voltage

VDSS

65

Vdc

Drain–Gate Voltage (RGS = 1.0 MΩ)

VDGR

65

Vdc

Gate–Source Voltage

VGS

± 20

Adc

Drain Current — Continuous

ID

8.0

ADC

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

175

1.0

Watts

°C/W

Storage Temperature Range

Tstg

– 65 to +150

°C

Operating Junction Temperature

TJ

200

°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

R

θJC

1.0

°C/W

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF166W

40 W, 500 MHz

TMOS BROADBAND

RF POWER FET

CASE 412–01, Style 1

FLANGE

1

5

2

3

4

Order this document

by MRF166W/D

SEMICONDUCTOR TECHNICAL DATA

1

REV 3