Characteristic (1)

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 50 mA)

V(BR)DSS

65

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0)

IDSS

—

—

2.0

mAdc

Gate–Source Leakage Current

(VGS = 20 V, VDS = 0)

IGSS

—

—

1.0

µAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = 10 V, ID = 50 mA)

VGS(th)

1.0

3.0

6.0

Vdc

Drain–Source On–Voltage

(VGS = 10 V, ID = 3.0 A)

VDS(on)

—

—

1.4

Vdc

Forward Transconductance

(VDS = 10 V, ID = 2.0 A)

gfs

1.8

2.2

—

mhos

DYNAMIC CHARACTERISTICS (1)

Input Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Ciss

—

100

—

pF

Output Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Coss

—

105

—

pF

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Crss

—

10

—

pF

FUNCTIONAL CHARACTERISTICS (Figure 8) (2)

Common Source Power Gain

(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)

GPS

10

12

—

dB

Drain Efficiency

(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)

η

55

60

—

%

Electrical Ruggedness

(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA,

Load VSWR = 30:1, All Phase Angles At Frequency of Test)

ψ

No Degradation

in Output Power

Before & After Test

(1) Note each transistor chip measured separately

(2) Both transistor chips operating in push–pull amplifier

2

REV 9