RFHA3960 datasheet(2/12 Pages) RFMD

2 / 12 page

RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS131206

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of

third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended

application circuitry and specifications at any time without prior notice.

2 of 12

RFHA3960

PRELIMINARY

Absolute Maximum Ratings

Parameter

Rating

Unit

Drain Voltage (VD)

150

Gate Voltage (VG)

-8 to +2

Operational Voltage

Ruggedness (VSWR)

10:1

Storage Temperature Range

-55 to +125

°C

Operating Temperature Range (TC)

-40 to +85

°C

Operating Junction Temperature (TJ)

200

°C

Human Body Model

Class 1A

MTTF (TJ < 200°C, 95% Confidence Limits)

1.8E + 07

Hours

MTTF (TJ < 250°C, 95% Confidence Limits)

1.4E + 05

Thermal Resistance, RTH (junction to case) measured at TC =

85°C, DC bias only

TBD

°C/W

Caution! ESD sensitive device.

RFMD Green: RoHS status based on EU

Directive 2011/65/EU (at time of this

document revision), halogen free per IEC

61249-2-21, < 1000ppm each of antimony

trioxide in polymeric materials and red

phosphorus as a flame retardant, and

<2% antimony in solder.

Exceeding any one or a combination of the Absolute

Maximum Rating conditions may cause permanent

damage to the device. Extended application of Absolute

Maximum Rating conditions to the device may reduce

device reliability. Specified typical performance or

functional operation of the device under Absolute

Maximum Rating conditions is not implied.

Nominal Operating Parameters

Parameter

Specification

Unit

Condition

Min

Typ

Max

Recommended Operating

Conditions

Drain Voltage (VDSQ)

Gate Voltage (VGSQ)

-4.5

-1.11

Drain Bias Current

Frequency of Operation

2500

MHz

Recommended Operating

Conditions

Drain Voltage (VDSQ)

Gate Voltage (VGSQ)

-4.5

-1.12

Drain Bias Current

Frequency of Operation

2500

MHz

Capacitance

CRSS

TBD

VG = -4V, VD = 0V

CISS

TBD

COSS

TBD

DC Functional Test

IG (OFF) - Gate Leakage

0.05

VG = -4V, VD = 0V

ID (OFF) - Drain Leakage

0.01

VG = -4V, VD = 18V

VGS (TH) - Threshold Voltage

0.95

VD = 48V, ID = 2.2mA

IG (stress) – Gate Leakage at high Drain

Voltage

0.1

VG = -4V, VD = 150V

RFHA3960 Datasheet(PDF) 2 Page - RF Micro Devices

RFHA3960 Datasheet(HTML) 2 Page - RF Micro Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL