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RFHA3960 Datasheet(PDF) 1 Page - RF Micro Devices

Part # RFHA3960
Description  Broadband Operation DC to 6GHz
PDF  12 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFHA3960 Datasheet(HTML) 1 Page - RF Micro Devices

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RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421
DS131206
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
RF MICRO DEVICES
® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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PRELIMINARY
RFHA3960
28V/48V 3Watts/6.3Watts GaN RF Power Amplifier
The RFHA3960 is a 28V, 3W and 48V, 6.3W High Power discrete
Amplifier designed for commercial Wireless Infrastructure, Cellular and
WiMAX Infrastructure, Industrial/Scientific/Medical and General Purpose
broadband Amplifier application. Using an advanced high power density
Gallium Nitride (GaN) semiconductor process, these high-performance
amplifiers achieve high efficiency, linearity and flat gain over a broad
frequency range in a single amplifier design. The RFHA3960 is an
unmatched GaN transistor packaged in a plastic over-molded SOIC, 8
pin package. The package provides excellent thermal stability through
the use of advanced heat sink and power dissipation technologies.
Functional Block Diagram
Ordering Information
RFHA3960S2
Sample bag with 2 pieces
RFHA3960SB
Bag with 5 pieces
RFHA3960SQ
Bag with 25 pieces
RFHA3960SR
Short reel with 100 pieces
RFHA3960TR7
7” reel with 500 pieces
RFHA3960TR13
13” reel with 2500 pieces
RFHA3960PCBA-410
Fully assembled evaluation board 2400 to
2600MHz, 28V and 48V operation
Package: Plastic Over Molded, 8-
pin, SOIC8
Features
■
Broadband Operation DC to 6GHz
■
Advanced GaN HEMT Technology
■
Advanced Heat-Sink Technology
■
28V Operation Typical P3dB
Performance at 2.5GHz
Output Power 3W at 2.5GHz
Drain Efficiency 57%
Small Signal Gain = 16dB
■
48V Operation Typical P3dB
Performance at 2.5GHz
Output Power 6.3W at 2.5GHz
Drain Efficiency 50%
Small Signal Gain = 15.5dB
■
-40°C to 85°C Operating
Temperature
Applications
■
Commercial Wireless Infrastructure
■
Cellular and WiMAX.Infrastructure
■
Civilian and Military Radar
■
General Purpose Broadband
Amplifier
■
Public Mobile Radio
■
Industrial, Scientific and Medical
RF IN
VGS
Pin 2,3
RF OUT
VDS
Pin 6,7
GND
BASE
RFHA3960


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