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RFHA3960 Datasheet(PDF) 1 Page - RF Micro Devices |
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RFHA3960 Datasheet(HTML) 1 Page - RF Micro Devices |
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1 / 12 page ![]() RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131206 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. RF MICRO DEVICES ® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 12 PRELIMINARY RFHA3960 28V/48V 3Watts/6.3Watts GaN RF Power Amplifier The RFHA3960 is a 28V, 3W and 48V, 6.3W High Power discrete Amplifier designed for commercial Wireless Infrastructure, Cellular and WiMAX Infrastructure, Industrial/Scientific/Medical and General Purpose broadband Amplifier application. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, linearity and flat gain over a broad frequency range in a single amplifier design. The RFHA3960 is an unmatched GaN transistor packaged in a plastic over-molded SOIC, 8 pin package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Functional Block Diagram Ordering Information RFHA3960S2 Sample bag with 2 pieces RFHA3960SB Bag with 5 pieces RFHA3960SQ Bag with 25 pieces RFHA3960SR Short reel with 100 pieces RFHA3960TR7 7” reel with 500 pieces RFHA3960TR13 13” reel with 2500 pieces RFHA3960PCBA-410 Fully assembled evaluation board 2400 to 2600MHz, 28V and 48V operation Package: Plastic Over Molded, 8- pin, SOIC8 Features ■ Broadband Operation DC to 6GHz ■ Advanced GaN HEMT Technology ■ Advanced Heat-Sink Technology ■ 28V Operation Typical P3dB Performance at 2.5GHz Output Power 3W at 2.5GHz Drain Efficiency 57% Small Signal Gain = 16dB ■ 48V Operation Typical P3dB Performance at 2.5GHz Output Power 6.3W at 2.5GHz Drain Efficiency 50% Small Signal Gain = 15.5dB ■ -40°C to 85°C Operating Temperature Applications ■ Commercial Wireless Infrastructure ■ Cellular and WiMAX.Infrastructure ■ Civilian and Military Radar ■ General Purpose Broadband Amplifier ■ Public Mobile Radio ■ Industrial, Scientific and Medical RF IN VGS Pin 2,3 RF OUT VDS Pin 6,7 GND BASE RFHA3960 |
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