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S1323 Datasheet(PDF) 13 Page - Seiko Instruments Inc

Part # S1323
Description  HIGH RIPPLE-REJECTION AND SMALL PACKAGE
PDF  28 Pages
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Manufacturer  SII [Seiko Instruments Inc]
Direct Link  http://www.sii.co.jp
Logo SII - Seiko Instruments Inc

S1323 Datasheet(HTML) 13 Page - Seiko Instruments Inc

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HIGH RIPPLE-REJECTION AND SMALL PACKAGE CMOS VOLTAGE REGULATOR
Rev.5.1_00
S-1323 Series
Seiko Instruments Inc.
13
3. ON/OFF pin
This pin starts and stops the regulator.
When the ON/OFF pin is set to OFF level, the entire internal circuit stops operating, and the built-in
P-channel MOS FET output transistor between the VIN pin and the VOUT pin is turned off, reducing
current consumption significantly. The VOUT pin becomes the VSS level due to the internally divided
resistance of several hundreds k
Ω between the VOUT pin and the VSS pin.
The structure of the ON/OFF pin is as shown in Figure 13. Since the ON/OFF pin is neither pulled down
nor pulled up internally, do not use it in the floating status. In addition, note that the current consumption
increases if a voltage of 0.3 V to VIN – 0.3 V is applied to the ON/OFF pin. When not using the ON/OFF
pin, connect it to the VSS pin in the product A type, and connect it to the VIN pin in B type.
Table 6
Product Type
ON/OFF Pin
Internal Circuit
VOUT Pin Voltage
Current Consumption
A
“L”: ON
Operate
Set value
ISS1
A
“H”: OFF
Stop
VSS level
ISS2
B
“L”: OFF
Stop
VSS level
ISS2
B
“H”: ON
Operate
Set value
ISS1
VSS
ON/OFF
VIN
Figure 13
Selection of Output Capacitor (CL)
The S-1323 Series requires an output capacitor between the VOUT pin and VSS pin for phase
compensation. A ceramic capacitor with a capacitance of 1.0
μF or more can be used. When using an OS
capacitor, a tantalum capacitor, or an aluminum electrolytic capacitor, the capacitance must be 1.0
μF or
more, and the ESR must be 10
Ω or less.
The value of the output overshoot or undershoot transient response varies depending on the value of the
output capacitor.
When selecting the output capacitor, perform sufficient evaluation, including evaluation of temperature
characteristics, on the actual device.



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