MAX5918AEEE datasheet(2/15 Pages) MAXIM

2 / 15 page

Low-Voltage, Dual Hot-Swap Controllers with

Independent ON/OFF Control

_______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

(VIN_ = +1V to +13.2V provided at least one supply is higher than +2.7V, VON1 = VON2 = +2.7V, TA = -40°C to +85°C, unless other-

wise noted. Typical values are at VIN1 = +5V, VIN2 = +3.3V, and TA = +25°C.) (Note 1)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

IN_ to GND...........................................................................+14V

GATE_ to GND ...........................................-0.3V to (VIN_ + 6.2V)

ON_, PGOOD_, TIM to GND.......................-0.3V to the higher of

(VIN1 + 0.3V) and (VIN2 + 0.3V)

SENSE_, MON_, LIM_ to GND ...................-0.3V to (VIN_ + 0.3V)

Current into Any Pin .........................................................±50mA

Continuous Power Dissipation (TA = +70°C)

16-Pin QSOP (derate 8.3mW/°C above +70°C)...........667mW

Operating Temperature Range ...........................-40°C to +85°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

POWER SUPPLIES

IN_ Input Voltage Range

VIN

Other VIN

≥ +2.7V

1.0

13.2

Supply Current

IIN

IIN1 + IIN2, VIN1 = +5V, VIN2 = +3.3V

1.2

2.3

CURRENT CONTROL

TA = +25

°C

22.5

27.5

LIM = GND

TA = -40

°C to +85°C

20.5

27.5

Slow-Comparator Threshold

(VIN_ - VSENSE_) (Note 2)

VSC,TH

RLIM = 300k

Ω

100

130

1mV overdrive

Slow-Comparator Response Time

(Note 3)

tSCD

10mV overdrive

110

µs

VSU,TH

During startup

2 x VSC,TH

Fast-Comparator Threshold

(VIN_ - VSENSE_)

VFC,TH

VIN_ - VSENSE_; normal operation

4 x VSC,TH

Fast-Comparator Response Time

(VIN_ - VSENSE_)

tFCD

10mV overdrive, from overload condition

260

SENSE Input Bias Current

IB SENSE

VSENSE_ = VIN_

0.03

µA

MOSFET DRIVER

TA = 0°C to +85°C

8.0

10.8

13.6

RTIM = 100k

Ω

(maximum value)

TA = -40

°C to +85°C

10.8

RTIM = 4k

Ω (minimum value)

0.35

0.45

0.55

Startup Period (Note 4)

tSTART

TIM floating

Charging, VGATE_ = +5V, VIN_ = +10V (Note 5)

100

130

µA

Average Gate Current

IGATE

Discharging, triggered by a fault or when

VON < 0.875V

3mA

VIN_ = 3V to 13.2V

4.8

5.4

5.8

Gate-Drive Voltage

VDRIVE

VGATE_ - VIN_,

IGATE_ < 1µA

VIN_ = 2.7V to 3.0V

4.3

5.8

ON COMPARATOR

Low to high

0.85

0.875

0.90

ON Threshold

VON_,TH

Hysteresis

ON Propagation Delay

10mV overdrive

µs

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