BF998WR datasheet(6/12 Pages) JMNIC

Part #	BF998WR

Description	N-channel dual-gate MOS-FET

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Direct Link	http://www.jmnic.com

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6 / 12 page

1997 Sep 05

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate MOS-FET

BF998WR

Fig.7

Forward transfer admittance as a function

of gate 1 voltage; typical values.

VDS = 8 V; Tamb =25 °C.

−11

MGC474

(V)

G1-S

y fs

(mS)

3 V

2 V

1 V

0 V

= 4 V

G2 S

Fig.8

Output capacitance as a function of

drain-source voltage; typical values.

VG2-S = 4 V; f = 1 MHz; Tamb =25 °C.

414

1.5

1.0

1.1

MGC475

1.2

1.3

1.4

VDS(V)

Cos

(pF)

12 mA

10 mA

8 mA

ID =

Fig.9

Gate 1 input capacitance as a function of

gate 1-source voltage; typical values.

VDS = 8 V; VG2-S = 4 V; f = 1 MHz; Tamb =25 °C.

−2.4

−1.6

−0.8

0.8

2.4

1.4

2.2

MGC476

2.0

1.8

1.6

Cis

(pF)

(mV)

G1-S

Fig.10 Gate 1 input capacitance as a function of

gate 2-source voltage; typical values.

VDS = 8 V; VG1-S = 0 V; f = 1 MHz; Tamb =25 °C.

−2

2.4

2.3

2.1

2.0

2.2

MGC477

Cis

(pF)

(V)

G2-S

BF998WR Datasheet(PDF) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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