8

9

4

3

1

2

7

6

5

10

GND

VoB

VoA

VDD

VoC

SD

BYPASS

IN B

IN A

MUTE

LM4911, LM4911Q

www.ti.com

SNAS152M – MAY 2004 – REVISED JUNE 2011

Connection Diagram

Figure 4. VSSOP Package (Top View)

Figure 5. WSON Package (Top View)

See Package Number DGS0010A

See Package Number NGY0010A

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Supply Voltage

6.0V

Storage Temperature

−65°C to +150°C

Input Voltage

Internally Limited

2000V

200V

Junction Temperature

150°C

56°C/W

190°C/W

Thermal Resistance

(6)

63°C/W

(6)

12°C/W

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is functional but do not ensure specific performance limits.Electrical Characteristics state DC and AC electrical

specifications under particular test conditions which ensures specific performance limits. This assumes that the device is within the

Operating Ratings. Specifications are not ensured for parameters where no limit is given; however, the typical value is a good indication

of device performance.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

whichever is lower. For the LM4911/LM4911Q, see power derating currents for more information.

(4)

Human body model, 100pF discharged through a 1.5k

Ω resistor.

(5)

Machine Model, 220pF-240pF discharged through all pins.

(6)

Operating Ratings

(LM4911MM)

Temperature Range

(LM4911QMM)

2V

Copyright © 2004–2011, Texas Instruments Incorporated

Submit Documentation Feedback

3

Product Folder Links: LM4911 LM4911Q