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KAI-1010 Datasheet(PDF) 1 Page - ON Semiconductor |
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KAI-1010 Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 27 page ![]() © Semiconductor Components Industries, LLC, 2015 May, 2015 − Rev. 2 1 Publication Order Number: KAI−1010/D KAI-1010 1008 (H) x 1018 (V) Interline CCD Image Sensor Description The KAI−1010 Image Sensor is a high-resolution monochrome charge coupled device (CCD) device whose non-interlaced architecture makes it ideally suited for video, electronic still and motion/still camera applications. The device is built using an advanced true two-phase, double-polysilicon, NMOS CCD technology. The p+npn− photodetector elements eliminate image lag and reduce image smear while providing antiblooming protection and electronic-exposure control. The total chip size is 10.15 (H) mm × 10.00 (V) mm Table 1. GENERAL SPECIFICATIONS Parameter Typical Value Architecture Interline CCD, Non-Interlaced Total Number of Pixels 1024 (H) × 1024 (V) Number of Effective Pixels 1008 (H) × 1018 (V) Number of Active Pixels 1008 (H) × 1018 (V) Number of Outputs 1 or 2 Pixel Size 9 mm (H) × 9 mm (V) Active Image Size 9.1 mm (H) × 9.2 mm (V) 12.9 mm (Diagonal) 1 ″ Optical Format Optical Fill-Factor 60% Saturation Signal > 50,000 e− Output Sensitivity 12 mV/e− Dark Noise 50 e− rms Dark Current < 0.5 nA/cm2 Quantum Efficiency (Wavelength = 500 nm) 37% Blooming Suppression > 100 X Maximum Data Rate 20 MHz/Channel (2 Channels) Image Lag Negligible Package CERDIP Cover Glass AR Coated (Both Sides) NOTE: All Parameters are specified at T = 40 °C unless otherwise noted. Features • Front Illuminated Interline Architecture • Progressive Scan (Non-Interlaced) • Electronic Shutter • On-Chip Dark Reference • Low Dark Current • High Sensitivity Output Structure • Anti-Blooming Protection • Negligible Lag • Low Smear (0.1% with Microlens) Application • Machine Vision www.onsemi.com Figure 1. KAI−1010 Interline CCD Image Sensor See detailed ordering and shipping information on page 2 of this data sheet. ORDERING INFORMATION |
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