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ISO5852S Datasheet(PDF) 18 Page - Texas Instruments

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Part # ISO5852S
Description  High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features
PDF  37 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

ISO5852S Datasheet(HTML) 18 Page - Texas Instruments

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ISO5852S
SLLSEQ0A – AUGUST 2015 – REVISED SEPTEMBER 2015
www.ti.com
Feature Description (continued)
9.3.6 High Voltage Feature Description
9.3.6.1 Package Insulation and Safety-Related Specifications
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
L(I01)
Minimum air gap (clearance)
Shortest terminal-to-terminal distance through air
8
mm
Shortest terminal-to-terminal distance across the package
L(I02)(1)
Minimum external tracking (creepage)
8
mm
surface
DIN EN 60112 (VDE 0303-11);
Tracking resistance (comparative
CTI
IEC 60112; Material Group I according to IEC 60664-1;
600
V
tracking index)
UL 746A
(1)
Per JEDEC package dimensions.
NOTE
Creepage and clearance requirements should be applied according to the specific
equipment isolation standards of an application. Care should be taken to maintain the
creepage and clearance distance of a board design to ensure that the mounting pads of
the isolator on the printed-circuit board do not reduce this distance.
Creepage and clearance on a printed-circuit board become equal in certain cases.
Techniques such as inserting grooves and/or ribs on a printed circuit board are used to
help increase these specifications.
9.3.6.2 Insulation Characteristics
PARAMETER
TEST CONDITIONS
SPECIFICATION
UNIT
DTI
Distance through the insulation
Minimum internal gap (internal clearance)
21
μm
1500
VRMS
VIOWM
Maximum isolation working voltage
Time dependent dielectric breakdown (TDDB) Test
2121
VDC
DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
VIORM
Maximum repetitive peak isolation voltage
2121
Method A, After Input/Output safety test subgroup 2/3,
VPR = 1.2 x VIORM, t = 10 sec,
2545
Partial discharge < 5 pC
Method A, After environmental tests subgroup 1,
VPR
Input to output test voltage
VPR = 1.6 × VIORM, t = 10 sec (qualification)
3393
Partial discharge < 5 pC
VPK
Method B1, 100% Production test,
VPR = 1.875 × VIORM, t = 1 sec
3976
Partial discharge < 5 pC
VTEST = VIOTM, t = 60 sec (qualification), t = 1 sec (100%
VIOTM
Maximum Transient isolation voltage
8000
production)
Test method per IEC 60065, 1.2/50
μs waveform, VTEST =
VIOSM
Maximum surge isolation voltage
8000
1.6 x VIOSM = 12800 VPK (qualification)
(1)
RS
Insulation resistance
VIO = 500 V at TS
Ω
> 109
VIO = 500 V, TA = 25°C
Ω
> 1012
RIO
Isolation resistance, input to output(2)
VIO = 500 V, 100°C ≤ TA ≤ max
Ω
> 1011
CIO
Barrier capacitance, input to output(2)
VIO = 0.4 x sin (2πft), f = 1 MHz
1
pF
Pollution degree
2
UL 1577
VTEST = VISO, t = 60 sec (qualification),
VISO
Withstanding Isolation voltage
VTEST = 1.2 × VISO = 6840 VRMS, t = 1 sec (100%
5700
VRMS
production)
(1)
Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
(2)
All pins on each side of the barrier tied together creating a two-terminal device
18
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