www.onsemi.com

©Semiconductor Components Industries, LLC, 2015

March 2015 - Rev. 1

TF262TH

N-Channel JFET

–20V, 140 to 350µA, 0.95mS

Publication Order Number:

TF262TH/D

1

Features

•

•

Ultrasmall Package Facilitates Miniaturization in End Products : 1.4mm × 1.2mm × 0.34mm

•

Especially Suited for use in electret condenser microphone for audio equipments and telephones

•

Adoption of FBET process

•

Halogen Free compliance

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Gate to Drain Voltage

VGDO

--20

V

Gate Current

IG

10

mA

Drain Current

ID

1

mA

Allowable Power Dissipation

PD

100

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

This product is designed to “ESD immunity < 200V

*”, so please take care when handling.

* Machine Model

Packing Type : TL

Electrical Connection

Marking

TL

1

2

3

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

TF262TH-4-TL-H

TF262TH-5-TL-H

1 : Drain

2 : Source

3 : Gate

SOT-623 / VTFP

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of this data sheet.

L

R

A

N

K

3

1

2