BTS 707

Semiconductor Group

8

2003-Oct-01

GND disconnect

PROFET

V

IN

ST

OUT

GND

bb

V

bb

V

IN

V

ST

V

GND

GND disconnect with GND pull up

PROFET

V

IN

ST

OUT

GND

bb

V

bb

V

GND

V

IN

V

ST

load

PROFET

V

IN

ST

OUT

GND

bb

V

bb

high

For an inductive load current up to the limit defined by EAS

(max. ratings ) each switch is protected against loss of Vbb.

Consider at your PCB layout that in the case of Vbb dis-

connection with energized inductive load the whole load

current flows through the GND connection.

Inductive load switch-off energy

dissipation

PROFET

V

IN

ST

OUT

GND

bb

=

E

E

E

EAS

bb

L

R

ELoad

RL

L

{

L

Z

Energy stored in load inductance:

2

L

While demagnetizing load inductance, the energy

dissipated in PROFET is

with an approximate solution for RL > 0 Ω:

)