STL7N10F7 datasheet(4/14 Pages) STMICROELECTRONICS

Part #	STL7N10F7

Description	N-channel 100 V, 0.027 Ω typ., 7 A STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3x3.3 package

PDF	14 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 14 page

Electrical characteristics

STL7N10F7

4/14

DocID025972 Rev 2

Electrical characteristics

CASE

=25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(BR)DSS

Drain-source breakdown

voltage, V

= 0

= 250 μA

100

DSS

Zero gate voltage drain

current, (V

= 0)

= 100 V

μA

= 100 V, T

= 125 °C

100

μA

GSS

Gate body leakage current

= 20 V, (V

= 0)

100

GS(th)

Gate threshold voltage

= V

, I

= 250 μA

2.5

4.5

DS(on)

Static drain-source on-

resistance

= 10 V, I

= 3.5 A

0.027

0.035

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

iss

Input capacitance

=50 V, f=1 MHz,

-920

oss

Output capacitance

215

rss

Reverse transfer

capacitance

-19

Total gate charge

=50 V, I

= 7 A

=10 V

(see Figure 14)

-14

Gate-source charge

Gate-drain charge

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

d(on)

Turn-on delay time

=50 V, I

= 3.5 A,

=4.7

Ω, V

= 10 V

(see Figure 13)

-9.8

Rise time

d(off)

Turn-off delay time

14.8

Fall time

4.6

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