DMP3012LPS datasheet(2/6 Pages) DIODES

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POWERDI is a registered trademark of Diodes Incorporated.

DMP3012LPS

Document number: DS35247 Rev. 2 - 2

2 of 6

www.diodes.com

April 2014

DMP3012LPS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-30

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = -10V

Steady

State

TA = +25°C

TA = +70°C

13.2

10.5

Continuous Drain Current (Note 6) VGS = -4.5V

Steady

State

TA = +25°C

TA = +70°C

11.4

9.1

Pulsed Drain Current (Notes 6)

IDM

-100

Avalanche Current (Notes 7) L = 1mH

IAR

-24

Avalanche Energy (Notes 7) L = 1mH

EAR

292

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

1.29

Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5)

RθJA

°C/W

Power Dissipation (Note 6)

2.36

Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 6)

RθJA

°C/W

Thermal Resistance, Junction to Case @ TC = +25°C (Notes 6 )

RθJC

4.0

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

-30

—

VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS

—

-1.0

μA

VDS = -30V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

-1.1

-1.6

-2.1

VDS = VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS (ON)

—

7.5

9.0

mΩ

VGS = -10V, ID = -10A

—

8.5

12.0

VGS = -4.5V, ID = -10A

Forward Transfer Admittance

|Yfs|

—

VDS = -15V, ID = -10A

Diode Forward Voltage

VSD

—

-0.65

-1.0

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

6807

—

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

988

—

Reverse Transfer Capacitance

Crss

—

647

—

Gate Resistance

—

6.2

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = -10V)

—

139

—

VDS = -15V, ID = -10A

Total Gate Charge (VGS = -4.5V)

—

Gate-Source Charge

Qgs

—

Gate-Drain Charge

Qgd

—

Turn-On Delay Time

tD(on)

—

8.9

—

VDS = -15V, VGEN = -10V,

RG = 6Ω, ID = -1A

Turn-On Rise Time

—

10.5

—

Turn-Off Delay Time

tD(off)

—

254

—

Turn-Off Fall Time

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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